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Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Author(s):
Ryu, S.H.
Krishnaswami, S.
Hull, B.A.
Heath, B.
Das, M.K.
Richmond, J.T.
Agarwal, A.K.
Palmour, J.W.
Scofield, J.D.
4 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
2
Page(from):
1261
Page(to):
1264
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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