Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs

Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs

Author(s):

Trabelsi, M.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

1251

Page(to):

1254

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs Sghaier, N., Bluet, J.M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C. Trans Tech Publications	7 Conference Proceedings Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications
2 Conference Proceedings Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs Sghaier, N., Bluet, J.M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C. Trans Tech Publications	8 Conference Proceedings UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC Masarotto, L., Bluet, J.M., Guillot, G. Trans Tech Publications
3 Conference Proceedings Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Gassoumi, M., Sghaier, N., Dermoul, I., Chekir, F., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, … Trans Tech Publications	9 Conference Proceedings UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC Masarotto, L., Bluet, J.M., Guillot, G. Trans Tech Publications
4 Conference Proceedings Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy Bluet, J. M., Gassoumi, M., Dermoul, I., Chekir, F., Maaref, H., Guillot, G., Morvan, E., Dua, C., Brylinski, C. Trans Tech Publications	10 Conference Proceedings Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Sartel, C., Bluet, J.M., Souliere, V., El-Harrouni, I., Monteil, Y., Mermoux, M., Guillot, G. Trans Tech Publications
5 Conference Proceedings Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi- Insulating Substrates Sghaier, Nabil, Bluet, Jean-Marie, Souifi, Abdel k., Berenguer, Manuel, Guillot, Gerard, Noblanc, Olivier, Brylinski, … Materials Research Society	11 Conference Proceedings Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, R., Eriksson, J., Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications
6 Conference Proceedings Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications	12 Conference Proceedings Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, Rolf, Eriksson, Joakim, Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12