Blank Cover Image

Energy Efficiency: The Commercial Pull for SiC Devices

Author(s):
Palmour, J.W.  
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
2
Page(from):
1129
Page(to):
1134
Pages:
6
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

L. Cheng, J.W. Palmour, A.K. Agarwal, S.T. Allen, E.V. Brunt

Trans Tech Publications
7 Conference Proceedings *EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE

Davis, Robert F., Palmour, J.W., Edmond, J.A.

Materials Research Society
2 Conference Proceedings SiC Device Applications: Identifying and Developing Commercial Applications

Hancock, J.W.

Trans Tech Publications
8 Conference Proceedings N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, L.A., Das, M.K., Palmour, J.W.

Trans Tech Publications
3 Conference Proceedings SiC Devices with ONO Stacked Dielectrics

Lipkin, L. A., Palmour, J. W.

Trans Tech Publications
9 Conference Proceedings N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, L.A., Das, M.K., Palmour, J.W.

Trans Tech Publications
4 Conference Proceedings Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

M. O'Loughlin, A. Burk Jr., D. Tsvetkov, S. Ustin, J.W. Palmour

Trans Tech Publications
10 Conference Proceedings High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

D.J. Lichtenwalner, V. Pala, B. Hull, S. Allen, J.W. Palmour

Trans Tech Publications
5 Conference Proceedings A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J.

Trans Tech Publications
11 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT

Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W.

Trans Tech Publications
6 Conference Proceedings Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, …

Trans Tech Publications
12 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT

Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12