Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Author(s):

Tumakha, S.P.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

907

Page(to):

910

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings A Study of Inhomogeneous Schottky Diodcs on n-Type 4H-SiC Ewing, D.J., Wahab, Q., Tumakha, S.P., Brillson, L.J., Ma, X.Y., Sudarshan, T.S., Porter, L.M. Trans Tech Publications	7 Conference Proceedings Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes Scaltrito, L., Porro, S., Giorgis, F., Mandracci, P., Cocuzza, M., Pirri, C.F., Ricciardi, C., Ferrero, S., Richieri, … Trans Tech Publications
2 Conference Proceedings Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies Gao, M., Tumakha, S.P., Onishi, T., Tsukimoto, S., Murakami, M., Brillson, L.J. Trans Tech Publications	8 Conference Proceedings SiC Studied Via LEEN and Cathodoluminescence Spectroscopy Brillson, L.J., Tumakha, S., Okojie, R.S., Zhang, M., Pirouz, P. Trans Tech Publications
3 Conference Proceedings 4H- to 3C-SiC Polytypic Transformation during Oxidation Okojie, R.S., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., Brillson, L.J. Trans Tech Publications	9 Conference Proceedings Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC M. Naretto, D. Perrone, S. Ferrero, L. Scaltrito Trans Tech Publications
4 Conference Proceedings 4H- to 3C-SiC Polytypic Transformation during Oxidation Okojie, R.S., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., Brillson, L.J. Trans Tech Publications	10 Conference Proceedings Inverted Pyramid Defects in 4H-SiC Epilayers A. Shrivastava, P.G. Muzykov, T.S. Sudarshan Trans Tech Publications
5 Conference Proceedings Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation Okojie, R.S., Lukco, D., Keys, L., Tumakha, S., Brillson, L.J. Trans Tech Publications	11 Conference Proceedings Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes Raineri, V., Roccaforte, F., Libertino, S., Ruggiero, A., Massimino, V., Calcagno, L. Trans Tech Publications
6 Conference Proceedings Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation Okojie, R.S., Lukco, D., Keys, L., Tumakha, S., Brillson, L.J. Trans Tech Publications	12 Conference Proceedings Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes Zhang, Q., Madangarli, V., Gao, Y., Sudarshan, T.S. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12