Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes

Author(s):

Garces, N.Y.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

547

Page(to):

550

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

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