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CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Author(s):
Shishkin, Y.
Ke, Y.
Yan, F.
Devaty, R.P.
Choyke, W.J.
Saddow, S.E.
1 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. date:
2006
Pt.:
1
Page(from):
255
Page(to):
258
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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