Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

1

Page(from):

163

Page(to):

166

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization L. Calcagno, G. Izzo, G. Litrico, G. Galvagno, A. Firrincieli, S. Di Franco, M. Mauceri, S. Leone, G. Pistone, G. … Trans Tech Publications	7 Conference Proceedings SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor Leone, S., Mauceri, M., Pistone, G., Abbondanza, G., Portuese, F., Abagnale, G., Valente, G.L., Crippa, D., Barbera, M., … Trans Tech Publications
2 Conference Proceedings Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization La Via, F., Galvagno, G., Firrincieli, A., Roccaforte, F., Di Franco, S., Ruggiero, A., Calcagno, L., Foti, G., Mauceri, … Trans Tech Publications	8 Conference Proceedings Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco … Materials Research Society
3 Conference Proceedings High Growth Rate Process in a SiC Horizontal Reactor With HCl Addition: Structural and Electrical Characterization Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco … Materials Research Society	9 Conference Proceedings Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements Ruggiero, A., Libertino, S., Mauceri, M., Reitano, R., Musumeci, P., Roccaforte, F., La Via, F., Calcagno, L. Trans Tech Publications
4 Conference Proceedings Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes Via, F. La, Roccaforte, F., Franco, S. Di, Ruggiero, A., Neri, L., Reitano, R., Calcagno, L., Foti, G., Mauceri, M., … Trans Tech Publications	10 Conference Proceedings Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers Ruggiero, A., Zimbone, M., Roccaforte, F., Libertino, S., Via, F. La, Reitano, R., Calcagno, L. Trans Tech Publications
5 Conference Proceedings Very High Growth Rate Epitaxy Processes with Chlorine Addition F. La Via, S. Leone, M. Mauceri, G. Pistone, G. Condorelli, G. Abbondanza, F. Portuese, G. Galvagno, S. Di Franco, L. … Trans Tech Publications	11 Conference Proceedings Carbonization Study of Different Silicon Orientations A. Severino, C. Bongiorno, S. Leone, M. Mauceri, G. Pistone, G. Condorelli, G. Abbondanza, F. Portuese, G. Foti, F. La … Trans Tech Publications
6 Conference Proceedings New Achievements on CVD Based Methods for SiC Epitaxial Growth Crippa, D., Valente, G. L., Ruggiero, A., Neri, L., Reitano, R., Calcagno, L., Foti, G., Mauceri, M., Leone, S., … Trans Tech Publications	12 Conference Proceedings Structural Properties of 3C-SiC Layers Grown on Si Substrates by Electron Cyclotron Resonance CVD Technique Giorgis, F., Chiodoni, A., Cicero, G., Ferrero, S., Mandracci, P., Pirri, C.F., Barucca, G., Calcagno, L., Foti, G., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12