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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Author(s):
Sumakeris, J.J.
Bergman, J.P.
Das, M.K.
Hallin, C.
Hull, B.A.
Janzen, E.
Lendenmann, H.
O'Loughlin, M.J.
Paisley, M.J.
Ha, S.
Skowronski, M.
Palmour, J.W.
Carter, C.H.,Jr
8 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
1
Page(from):
141
Page(to):
146
Pages:
6
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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