Temperature Variation Effects on Current-Voltage (i-v) Characteristics of A-GaN Schottky Diode

Temperature Variation Effects on Current-Voltage (i-v) Characteristics of A-GaN Schottky Diode

Author(s):

Publication title:

Functional materials and devices : papers presented at the International Conference on Functional Materials and Devices 2005 (ICFMD-2005), held in Kuala Lumpur, Malaysia, 6th-8th June 2005

Title of ser.:

Materials science forum

Ser. no.:

517

Pub. Year:

2006

Page(from):

141

Page(to):

146

Pages:

6

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494040 [0878494049]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015824
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Functional Materials and Devices - ICFMD
Conf. info. (Number):	2005
Conf. info. (Venue):	Kuala Lumpur, Malaysia
Conf. info. (Date):	2005.06.06-2005.06.08

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