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Modification of Ge2Sb2Te5 by the Addition of SiOx for Improved Operation of Phase Change Random Access Memory

Author(s):
Noh, Jin-Seo
Suh, Dong-Seok
Lee, Sang Mock
Kim, Kijoon H.P.
Shin, Woong-Chul
Lee, Eunhye
Kang, Youn-Seon
Park, Ju-Cheol
Kim, Ki-Hong
Khang, Yoonho
5 more
Publication title:
Materials and devices for smart systems II : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
888
Pub. Year:
2006
Page(from):
137
Page(to):
144
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998421 [155899842X]
Language:
English
Call no.:
M23500/888
Type:
Conference Proceedings

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