Fine Keyed Alignment and Bonding for Wafer-Level 3D Ics

Fine Keyed Alignment and Bonding for Wafer-Level 3D Ics

Author(s):

Lee, Sang Hwui

Publication title:

Materials, technology and reliability of low-k dielectrics and copper interconnects : symposium held April 18-21, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

914

Pub. Year:

2006

Page(from):

433

Page(to):

438

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998705 [1558998705]

Language:

English

Call no.:

M23500/914

Type:

Conference Proceedings

Details

TDL ID:	ZA00015794
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials, technology and reliability of low-k dielectrics and copper interconnects
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2006.04.18-2006.04.21

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