Effects of the High-Refractive Index SiN Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage Current
- Author(s):
- Publication title:
- GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 892
- Pub. Year:
- 2006
- Page(from):
- 69
- Page(to):
- 76
- Pages:
- 8
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998469 [1558998462]
- Language:
- English
- Call no.:
- M23500/892
- Type:
- Conference Proceedings
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