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Effects of the High-Refractive Index SiN Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage Current

Author(s):
Publication title:
GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
892
Pub. date:
2006
Page(from):
69
Page(to):
76
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998469 [1558998462]
Language:
English
Call no.:
M23500/892
Type:
Conference Proceedings

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