Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

Author(s):

Publication title:

Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

891

Pub. Year:

2006

Page(from):

521

Page(to):

526

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998452 [1558998454]

Language:

English

Call no.:

M23500/891

Type:

Conference Proceedings

Details

TDL ID:	ZA00015788
Series ID:	PA00000011
Conf. info. (Name):	Symposium on progress in semiconductor materials
Conf. info. (Number):	5th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2005.11.28-2005.12.01

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