EFFECT OF C IMPURITIES IN a-Si:H AS MEASURED BY DRIVE-LEVEL CAPACITANCE, PHOTOCURRENT, AND ELECTRON SPIN RESONANCE

EFFECT OF C IMPURITIES IN a-Si:H AS MEASURED BY DRIVE-LEVEL CAPACITANCE, PHOTOCURRENT, AND ELECTRON SPIN RESONANCE

Author(s):

Publication title:

Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

297

Pub. Year:

1993

Page(from):

375

Page(to):

380

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991934 [155899193X]

Language:

English

Call no.:

M23500/297

Type:

Conference Proceedings

Details

TDL ID:	ZA00015781
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1993
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1993.04.13-1993.04.16

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