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THE STRUCTURE OF GaAs GROWN BY CHEMICAL BEAM EPITAXY ON LOW-TEMPERATURE CLEANED SILICON

Author(s):
Publication title:
Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
281
Pub. date:
1993
Page(from):
333
Page(to):
338
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991767 [155899176X]
Language:
English
Call no.:
M23500/281
Type:
Conference Proceedings

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