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GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Author(s):
Chin, T.P.
Chang, J.C.P.
Kavanagh, K.L.
Tu, C.W.
Kirchner, P.D.
Woodall, J.M.
1 more
Publication title:
Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
281
Pub. Year:
1993
Page(from):
227
Page(to):
232
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991767 [155899176X]
Language:
English
Call no.:
M23500/281
Type:
Conference Proceedings

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