INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUM WELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY

INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUM WELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

281

Pub. Year:

1993

Page(from):

153

Page(to):

160

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

Language:

English

Call no.:

M23500/281

Type:

Conference Proceedings

Details

TDL ID:	ZA00015765
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor heterostructures for photonic and electronic applications
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

Similar Items:

1 Conference Proceedings CHARACTERISTICS AND GROWTH OF STRAINED-LAYER InGaAs/GaInAsP/GaInP QUANTUM WELL LASERS Zhang, G., Ovtchinnikov,A., Nappi, J., Asonen, H. Materials Research Society	7 Conference Proceedings STRAINED InGaAs/GaAs MULTIPLE QUANTUM WELLS GROWN ON PLANAR AND PRE-PATTERNED GaAs(100) SUBSTRATES VIA MOLECULAR BEAM EPITAXY: APPLICATIONS TO LIGHT MODULATORS … Chen, Li, Hu, Kezhong, Bajkumar, K. C., Guha, S., Kapre, R., Madhukar, A. Materials Research Society
2 Conference Proceedings High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy Li, W., Peng, C.S., Jouhti, T., Konttinen, J., Pevelescu, E.-M., Suominen, M., Dumitrescu, M.M., Pessa, M. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia S. A. Nikishin, B. A. Borisov, G. A. Garrett, W. L. Sarney, A. V. Sampath, H. Shen, M. Wraback, M. Holtz SPIE - The International Society of Optical Engineering
3 Conference Proceedings Aspects of the Growth of InP / InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy Davies J. G., Scott G. E., Lyons H. M., Rejman-Greene Z. A. M., Andrews A. D. Plenum Press	9 Conference Proceedings Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate Niu,Z., Zhou,Z., Lin,Y., Zhang,Y., Li,X., Hu,X. SPIE-The International Society for Optical Engineering
4 Conference Proceedings GaInNAs/GaAs Multiple Quantum Wells at 1.3 μm Wavelength Grown by Gas-Source Molecular Beam Epitaxy Xin, H.P., Tu, C.W. Electrochemical Society	10 Conference Proceedings Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE Zhou,J.M., Hou,H.Q., Huang,Y. Trans Tech Publications
5 Conference Proceedings InGaAs/GaAs QUANTUM WELL STRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY Wu, J. E., Yoo, H. M., Stoebe, T. G. Materials Research Society	11 Conference Proceedings Test Production of GaInP/GaAs Cascade Space Solar Cells by a High-Throughput Molecular Beam Epitaxy System Lammasniemi, J., Kazantsev, A.B., Jaakkola, R., Aho, R., Maekelae, T., Pessa, M., Ovtchinnikov, A., Asonen, H., Robben, … ESA Publications Division
6 Conference Proceedings CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY Bulitka, N. J., Gupta, A., Robinson, B. J., Thompson, D. A., Weatherly, G. C., Simmons, J. G. MRS - Materials Research Society	12 Conference Proceedings LASER QUALITY AlGaAs-GaAs QUANTUM WELLS GROWN ON LOW TEMPERATURE GaAs Hwang, Y., Zhang, D., Zhang, T., Mytych, M., Kolbas, R.M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12