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Ge SEGREGATION AND SURFACE ROUGHENING DURING Si GROWTH ON Ge(001)2x1 BY GAS-SOURCE MOLECULAR BEAM EPITAXY FROM Si2H6

Author(s):
Publication title:
Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
280
Pub. Year:
1993
Page(from):
281
Page(to):
284
Pages:
4
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991750 [1558991751]
Language:
English
Call no.:
M23500/280
Type:
Conference Proceedings

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