DOSE RATE DEPENDENCE OF THE ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON

DOSE RATE DEPENDENCE OF THE ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON

Author(s):

Publication title:

Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

279

Pub. Year:

1993

Page(from):

273

Page(to):

278

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991743 [1558991743]

Language:

English

Call no.:

M23500/279

Type:

Conference Proceedings

Details

TDL ID:	ZA00015763
Series ID:	PA00000011
Conf. info. (Name):	Symposium on beam-solid interactions
Conf. info. (Number):	1992
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1992.11.30-1992.12.04

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