Blank Cover Image

ROLE OF OXYGEN PRECIPITATION PROCESSES IN DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Author(s):
Publication title:
Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
279
Pub. Year:
1993
Page(from):
153
Page(to):
158
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991743 [1558991743]
Language:
English
Call no.:
M23500/279
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Lee, J. D., Park, J. C., Venables, D., Krause, S. J., Roitman, P.

MRS - Materials Research Society
7 Conference Proceedings OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON

Krause, S.J., Seraphin, S., Chen, B.L., Cordts, B., Roitman, P.

Materials Research Society
2 Conference Proceedings Effect of implantation conditions on defect microstructure in annealed SIMOX

Lee, J.D., Park, J.C., Krause, S.J., Venables, D., Roitman, P.

Electrochemical Society
8 Conference Proceedings STRAIN RELIEF AND DEFECT FORMATION IN HIGH DOSE OXYGEN IMPLANTED SILICON

Venables, D., Jones, K. S., Namavar, F., Manke, J. M.

Materials Research Society
3 Conference Proceedings EFFECT OF INTERMEDIATE THERMAL PROCESSING ON MICROSTRUCTURAL CHANGES OF OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Lee, J. D., Park, J. C., Krause, S. J., Roitman, P., El-Ghor, M. K.

Materials Research Society
9 Conference Proceedings TWINNING STRUCTURE OF (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Barry, J., Krause, S.

Materials Research Society
4 Conference Proceedings HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Jung, C. O., Cordts, B. F., Roitman, P., Krause, S. J.

Materials Research Society
10 Conference Proceedings Defect formation mechanisms in low dose SIMOS material

Bagchi, S, Lee, J D, Krause, S J, Roiman, P

Electrochemical Society
5 Conference Proceedings *PRECIPITATE AND DEFECT FORMATION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Krause, S. J., Jung, C. O., Ravi, T. S., Wilson, S. R., Burke, D. E.

Materials Research Society
11 Conference Proceedings FORMATION OF SILICON ON INSULATOR (SOI) WITH SEPARATION BY PLASMA IMPLANTATION OF OXYGEN (SPIMOX)

Liu, J. B., Iyer, S. S. K., Min, J., Chu, P., Gronsky, R., Hu, C., Cheung, N. W.

MRS - Materials Research Society
6 Conference Proceedings Effect of nitrogen ambients during high temperature SIMOX annealing

Roitman, P., Mayo, S., Simons, D., Krause, S.J., Venables, D., Park, J.C., Lee, J.D., Lenahan, P., Conley, J.

Electrochemical Society
12 Conference Proceedings EFFECT OF IMPLANTATION CONDITIONS ON THE MIROSTRUCTURE OF HIGH-CURRENT, OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Visitserngtrakul, S., Cordts, B.F., Krause, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12