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CHARACTERIZATION OF IN SITU P-TYPE ANDN-TYPE DOPED Si AND GeXSi1-X FILMS GROWN BY LOW TEMPERATURE REMOTE PLASMA CHEMICAL VAPOR DEPOSITION

Author(s):
Thomas, S.
Irby, J.
Kinosky, D.
Qian, R.
Iqbal, I.
Mahajan, A.
Benerjee, S.
Tasch, A
Magee, C.
4 more
Publication title:
Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
268
Pub. Year:
1992
Page(from):
223
Page(to):
228
Pages:
6
Pub. info.:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991637 [1558991638]
Language:
English
Call no.:
M23500/268
Type:
Conference Proceedings

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