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THE DEPENDENCE OF DEFECT DENSITY IN GeXSi1-X/Si HETEROSTRUCTURES GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION ON DEPOSITION PARAMETERS

Author(s):
Kinosky, D.
Qian, R.
Hsu, T.
Irby, J.
Mahajan, A.
Thomas, S.
Banerjee, S.
Tasch, A.
Magee, C.
Grove, C. L.
5 more
Publication title:
Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
263
Pub. Year:
1992
Page(from):
445
Page(to):
450
Pages:
6
Pub. info.:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991583 [1558991581]
Language:
English
Call no.:
M23500/263
Type:
Conference Proceedings

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