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GENERATION OF DEFECTS AND STRAIN BY ION IMPLANTATION IN Ge(100) SINGLE CRYSTALS, AND IN PSEUDOMORPHIC GeXSi1-X FILMS GROWN ON Si(100)

Author(s):
Lie, D. Y. C.
Vantomme, A.
Eisen, F.
Nicolet, M.-A.
Arbet-Engets, V.
Wang, K. L.
1 more
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
1079
Page(to):
1084
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

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