IMPURITY GETTERING IN SILICON BY THIN POLYCRYSTALLINE FILMS
- Author(s):
- Publication title:
- Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 262
- Pub. Year:
- 1992
- Page(from):
- 1005
- Page(to):
- 1010
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991576 [1558991573]
- Language:
- English
- Call no.:
- M23500/262
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Systematic Analyses of Practical Problems Related to Defects and Metallic Impurities in Silicon
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
3
Conference Proceedings
INVITED: COMPUTER SIMULATION OF IMPURITY GET?ERING CAPABILITY IN SILICON FOR CURRENT GETTERING TECHNIQUES
Electrochemical Society |
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
5
Conference Proceedings
Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffraction
Trans Tech Publications |
11
Conference Proceedings
A Simple Method for Gettering of Nickel within the NILC Polycrystalline Silicon Film Using a Gettering Substrate
Electrochemical Society |
6
Conference Proceedings
Novel evaluation method of silicon epitaxial layer lifetimes by photoluminescence technique
SPIE-The International Society for Optical Engineering |
Narosa Publishing House |