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IMPROVEMENT OF GATE OXIDE INTEGRITY CHARACTERISTICS IN CZ-GROWN Si CRYSTALS BY H2 ANNEALING

Author(s):
Adachi, N.
Nishikawa, H.
Komatsu, Y.
Hourai, H.
Sano, M
Shigematsu, T.
1 more
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
815
Page(to):
822
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

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