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COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs

Author(s):
Ren, F.
Fullowan, T. R.
Lochian, J. R.
Wisk, P.W.
Abernathy, C. R.
Kopf, R.F
Emerson, A. B.
Downey, S. W.
Pearton, S. J.
4 more
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. date:
1992
Page(from):
797
Page(to):
802
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

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