COMPARISON OF MESA-ETCHED AND ION-IMPLANTED GeXSi1-X HETEROJUNCTION BIPOLAR TRANSISTORS
- Author(s):
- Publication title:
- Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 262
- Pub. Year:
- 1992
- Page(from):
- 785
- Page(to):
- 790
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991576 [1558991573]
- Language:
- English
- Call no.:
- M23500/262
- Type:
- Conference Proceedings
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