A STUDY OF DEFECTS IN CZOCHRALSKI-GROWN SILICON BY POSITION ANNIHILATION SPECTROSCOPY

A STUDY OF DEFECTS IN CZOCHRALSKI-GROWN SILICON BY POSITION ANNIHILATION SPECTROSCOPY

Author(s):

Sharman, S. C

Publication title:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

262

Pub. Year:

1992

Page(from):

45

Page(to):

50

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

Language:

English

Call no.:

M23500/262

Type:

Conference Proceedings

Details

TDL ID:	ZA00015746
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect engineering in semiconductor growth, processing and device technology
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.26-1992.05.01

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