Ge/Pd AND Si/Pd/Ge/Pd NON-ALLOYED OHMIC CONTACTS TO InP EXAMINED BY BACKSIDE SECONDARY ION MASS SPECTROMETRY

Ge/Pd AND Si/Pd/Ge/Pd NON-ALLOYED OHMIC CONTACTS TO InP EXAMINED BY BACKSIDE SECONDARY ION MASS SPECTROMETRY

Author(s):

Schwatz, S. A.

Publication title:

Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

260

Pub. Year:

1992

Page(from):

525

Page(to):

530

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991552 [1558991557]

Language:

English

Call no.:

M23500/260

Type:

Conference Proceedings

Details

TDL ID:	ZA00015744
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced metallization and processing for semiconductor devices and circuits
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.05.01

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