Blank Cover Image

THE INFLUENCE OF A TiN CAP LAYER ON A TITANIUM-SALICIDE PROCESS: TITANIUM VS TITANIUM INTRIDE/TITANIUM

Author(s):
Publication title:
Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
260
Pub. Year:
1992
Page(from):
233
Page(to):
238
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991552 [1558991557]
Language:
English
Call no.:
M23500/260
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines

Besser, P. R., Lauwers, A., Roelandts, N., Maex, K., Blum, W., Alvis, R., Stucchi, M., Potter, M De

MRS - Materials Research Society
7 Conference Proceedings Thin TiN capped Ti-salicide technology for 0.25 μm CMOS/SIMOX

Matsubara, Y., Ohnishi, H., Ishigami, T., Iguchi, M., Nakamura, H., Horiuchi, T.

Electrochemical Society
2 Conference Proceedings Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Mouroux, A., Zhang, S.-L., Kaplan, W., Nygren, S., Ostling, M., Petersson, C. S.

MRS - Materials Research Society
8 Conference Proceedings Study on Combustion Synthesis and Densification Process for Titanium Diboride and Iron Layered Materials

K. Wang, J.P. Liu, Z.Y. Fu, W.M. Wang, H. Wang, J.Y. Zhang, Y. Peng, Q.J. Zhang

Trans Tech Publications
3 Conference Proceedings Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

H. Elahipanah, N. Thierry-Jebali, S.A. Reshanov, W. Kaplan, A. Zhang, J.K. Lim, M. Bakowski, M. Östling, A. Schöner

Trans Tech Publications
9 Conference Proceedings Influence of Film Thickness and Capping Layer on the Mechanical Properties of Copper Films

Keller, R.-M., Kuschke, W.-M., Kretschmann, A., Bader, S., Vinci, R. P., Arzt, E.

MRS - Materials Research Society
4 Conference Proceedings A Comparative Study of Nickel Silicide Formation Using a Titanium Cap Layer and a Titanium Interlayer

Tan, W.L., Pey, K.L., Chooi, Simon Y.M., Ye, J.H.

Materials Research Society
10 Conference Proceedings THE INFLUENCE OF SUBSTRATE DOPING ON SILICIDE FORMATION WITH TUNGSTEN DEPOSITED FROM TUNGSTEN HEXAFLUORIDE

Zhang, S.-L, Ostling M,, Buchta, R., Smith, U., Linnros, J., Gong, S.-F.

Materials Research Society
5 Conference Proceedings Impact of nitrogen ion implantation on deep submicron SALICIDE process

Lim,C.W,, Lahiri,S.K., Tung,C.H., Wong,S.M., Lee,K.H., Wong,H., Pey,K.L., Chan,L.H.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings CHARACTERIZATION OF SILICIDE FORMATION OF LPCVD-W BY MEANS OF RUTHERFORD BACKSCATTERING SPECTROMETRY AND X-RAY DIFFRACTOMETRY

Zhang, S.-L., Buchta, R., Ostling, M.

Materials Research Society
6 Conference Proceedings Degradation of PMOS series resistance due to Si implantation for Ti-salicide process

Lim,E.H., Siah,S.-Y., Lim,C.W., Lee,Y.M., Zheng,J.Z., Sundaresan,R., Pey,K.L.

SPIE - The International Society for Optical Engineering
12 Conference Proceedings INFLUENCE OF A CAPPING LAYER ON THE MECHANICAL PROPERTIES OF COPPER FILMS

Keller, R. -M., Bader, S., Vinci, R. P., Arzt, E.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12