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OPTIMIZATION OF Si-WAFER CLEANING AND THE USE OF BUFFER-LAYERS FOR EPITAXIAL GROWTH OF SiGe-LAYERS BY VLPCVD AT T = 650 C

Author(s):
Caymax, Matty R.
Poortmans, J.
Van Ammel, A.
Vandervorst, W.
Vanhellemont, J.
Nijs, J.
1 more
Publication title:
Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
259
Pub. date:
1992
Page(from):
461
Page(to):
466
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991545 [1558991549]
Language:
English
Call no.:
M23500/259
Type:
Conference Proceedings

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