IMPROVEMENT IN THE ACTIVATION EFFICIENCY OF IMPLANTED Si IN GaAs USING OXYGEN PLASMA PRETREATMENT

IMPROVEMENT IN THE ACTIVATION EFFICIENCY OF IMPLANTED Si IN GaAs USING OXYGEN PLASMA PRETREATMENT

Author(s):

Publication title:

Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

259

Pub. Year:

1992

Page(from):

311

Page(to):

316

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991545 [1558991549]

Language:

English

Call no.:

M23500/259

Type:

Conference Proceedings

Details

TDL ID:	ZA00015743
Series ID:	PA00000011
Conf. info. (Name):	Symposium on chemical surface preparation, passivation, and cleaning for semiconductor growth and processing
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.04.29

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