SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Author(s):

Lamb, H.H.

Publication title:

Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

259

Pub. Year:

1992

Page(from):

75

Page(to):

80

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991545 [1558991549]

Language:

English

Call no.:

M23500/259

Type:

Conference Proceedings

Details

TDL ID:	ZA00015743
Series ID:	PA00000011
Conf. info. (Name):	Symposium on chemical surface preparation, passivation, and cleaning for semiconductor growth and processing
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.04.29

Similar Items:

1 Conference Proceedings LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS Yasuda, T., ma, Y., Lucovsky, G. Materials Research Society	7 Conference Proceedings QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S. Materials Research Society
2 Conference Proceedings A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES … Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society	8 Conference Proceedings MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND … Habermehl, S., He, S. S., Chen, Y. L., Lucovsky, G. MRS - Materials Research Society
3 Conference Proceedings Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society	9 Conference Proceedings *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Kim, Sang S., Tsu, D. V., Lucovsky, G. Materials Research Society
4 Conference Proceedings Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society	10 Conference Proceedings THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Kim, Sang S., Tsu, D. V., Lucovsky, G. Materials Research Society
5 Conference Proceedings Kinetics Investigation of Remote Plasma-Enhanced Chemical Vapor Deposition of SiO2 Courtney, C.H., Lamb, H.H. Electrochemical Society	11 Conference Proceedings Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and … Ma, Y., Yasuda, T., Lucovsky, G. MRS - Materials Research Society
6 Conference Proceedings COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE … Yasuda, T., Ma, Y., Habermechl, S., Lucovsky, G. Materials Research Society	12 Conference Proceedings INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES Yasuda, T., Lucovsky, G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12