THE MODIFICATION OF THE ABRASION RESISTANCE OF TYPE Iia (110) DIAMOND USING CARBON AND NITROGEN IMPLANTATION

THE MODIFICATION OF THE ABRASION RESISTANCE OF TYPE Iia (110) DIAMOND USING CARBON AND NITROGEN IMPLANTATION

Author(s):

Publication title:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

242

Pub. Year:

1992

Page(from):

171

Page(to):

178

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

Language:

English

Call no.:

M23500/242

Type:

Conference Proceedings

Details

TDL ID:	ZA00015726
Series ID:	PA00000011
Conf. info. (Name):	Symposium on wide band gap semiconductors
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.02-1991.12.06

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