AN INVESTIGATION ON THE LATTICE SITE LOCATION OF THE EXCESS ARSENIC ATOMS IN GaAs LAYERS GROWN BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY

AN INVESTIGATION ON THE LATTICE SITE LOCATION OF THE EXCESS ARSENIC ATOMS IN GaAs LAYERS GROWN BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

241

Pub. Year:

1992

Page(from):

145

Page(to):

150

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991354 [1558991352]

Language:

English

Call no.:

M23500/241

Type:

Conference Proceedings

Details

TDL ID:	ZA00015725
Series ID:	PA00000011
Conf. info. (Name):	Symposium on low temperature (LT) gaas and related materials
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.04-1991.12.06

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