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SIMULATION DESIGN AND DEVICE CHARACTERISTICS OF AlAs/GaAs/AlAs RESONANT TUNNELING STRUCTURES WITH A GaInAs EMITTER SPACER LAYER

Author(s):
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
627
Page(to):
632
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

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