OHMIC CONTACTS TO HEAVILY CARBON-DOPED p+-GaAs USING Ti/Si/Pd

OHMIC CONTACTS TO HEAVILY CARBON-DOPED p+-GaAs USING Ti/Si/Pd

Author(s):

Lee, H. S.

Publication title:

Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

240

Pub. Year:

1992

Page(from):

467

Page(to):

472

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991347 [1558991344]

Language:

English

Call no.:

M23500/240

Type:

Conference Proceedings

Details

TDL ID:	ZA00015724
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced III-V compound semiconductor growth, processing and devices
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.02-1991.12.05

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