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DAMAGE INTRODUCED BY CH4/H2 REACTIVE ION ETCHING IN PSEUDOMORPHIC AlGaAs/InGaAs MODFETs

Author(s):
Pereira, R.
Van Hove, M.
De Raedt, W.
Van Hoof, C.
Broghs, G.
Van Rossum, M.
Braspenning, R. H.
Eijkemans, T. J.
Van Es, C. M.
Wolter, J. H.
5 more
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
361
Page(to):
366
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

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