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DIRECT EVIDENCE FOR INTERSTITIAL CARBON IN HEAVILY CARBON-DOPED GaAs

Author(s):
Hofler, G. E.
Klatt, J.
Baillargeon, J. N.
Averback, R. S.
Cheng, K. Y.
Hseih, K. C.
1 more
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
51
Page(to):
56
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

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