CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS
- Author(s):
- Hobson, W. S.
- Publication title:
- Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 240
- Pub. Year:
- 1992
- Page(from):
- 45
- Page(to):
- 50
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991347 [1558991344]
- Language:
- English
- Call no.:
- M23500/240
- Type:
- Conference Proceedings
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