STRESS DEPENDENT ELECTRICAL ACTIVATION OF IMPLANTED Si IN GaAs - A FOUR POINT BENDING STUDY

STRESS DEPENDENT ELECTRICAL ACTIVATION OF IMPLANTED Si IN GaAs - A FOUR POINT BENDING STUDY

Author(s):

Huang, J. G.

Publication title:

Mechanical behavior of materials and structures in microelectronics : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

226

Pub. Year:

1991

Page(from):

157

Page(to):

164

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991200 [1558991204]

Language:

English

Call no.:

M23500/226

Type:

Conference Proceedings

Details

TDL ID:	ZA00015710
Series ID:	PA00000011
Conf. info. (Name):	Symposium on mechanical behavior of materials and structures in microelectronics
Conf. info. (Number):	1991
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1991.04.30-1991.05.03

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