OXIDATION ENHANCED DIFFUSION OF Si AND Ge IN GaAs
- Author(s):
- Publication title:
- Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 224
- Pub. Year:
- 1991
- Page(from):
- 457
- Page(to):
- 460
- Pages:
- 4
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991187 [1558991182]
- Language:
- English
- Call no.:
- M23500/224
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
2
Conference Proceedings
THE EFFECT OF SUBSTRATE SURFACE ORIENTATION AND EPILAYER THICKNESS ON InGaAs./GaAs EPILAYER TILT AND TILT DIRECTION
Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
Materials Research Society |
10
Conference Proceedings
Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced schemes
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
ANISOTROPIC SURFACE ROUGHNESS IN STRAIN RELAXED In0.40Ga0.60As ON GaAs WITH A STEP-GRADED InxGa1-xAs BUFFER LAYER
MRS - Materials Research Society |
11
Conference Proceedings
GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY
Materials Research Society |
Materials Research Society |
Materials Research Society |