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Si AND GeSi1-x EPITAXIAL GROWTH ON SOI STRUCTURES BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION

Author(s):
Publication title:
Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
224
Pub. date:
1991
Page(from):
285
Page(to):
292
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991187 [1558991182]
Language:
English
Call no.:
M23500/224
Type:
Conference Proceedings

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