THERMAL STRESS IN PARTIALLY SEPARATED GaAs LAYERS GROWN EPITAXIALLY ON Si SUBSTRATES

THERMAL STRESS IN PARTIALLY SEPARATED GaAs LAYERS GROWN EPITAXIALLY ON Si SUBSTRATES

Author(s):

Publication title:

Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

221

Pub. Year:

1991

Page(from):

429

Page(to):

436

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991156 [1558991158]

Language:

English

Call no.:

M23500/221

Type:

Conference Proceedings

Details

TDL ID:	ZA00015705
Series ID:	PA00000011
Conf. info. (Name):	Symposium on heteroepitaxy of dissimilar materials
Conf. info. (Number):	1991
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1991.04.29-1991.05.02

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