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REDUCTION OF p+-n+ JUNCTION TUNNELING CURRENT FOR BASE CURRENT IMPROVEMENT IN Si/SiGe/Si HETEROJUNCTION BIPOLAR TRANSISTORS

Author(s):
Publication title:
Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
220
Pub. Year:
1991
Page(from):
445
Page(to):
450
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991149 [155899114X]
Language:
English
Call no.:
M23500/220
Type:
Conference Proceedings

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