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TEMPERATURE DEPENDENT DEFECT DENSITY CALCULATED FROM ACTIVATED CONDUCTIVITY OF a-Si:H

Author(s):
Publication title:
Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
219
Pub. Year:
1991
Page(from):
123
Page(to):
128
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991132 [1558991131]
Language:
English
Call no.:
M23500/219
Type:
Conference Proceedings

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