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IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS

Author(s):
Pearton, S.J.
Ren, F.
D'asaro, L.A.
Hobson, W.S.
Fullowan, T.R.
Lothian, J.
Abernathy, C.R.
Kopf, R.F.
Kuo, J.-M.
4 more
Publication title:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
216
Pub. Year:
1991
Page(from):
451
Page(to):
458
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
Language:
English
Call no.:
M23500/216
Type:
Conference Proceedings

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