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LPE GROWTH AND CHARACTERIZATION OF InAsSbP/In1-xGaxAs1-ySb /InAsSbP (x-0, y -O) HETEROSTRUCTURES FOR LONG WAVELENGTH (λ>3μm) LEDS AND LASERS

Author(s):
Aydaraliev, M.
arguniva, T.S.
Zotova, N.V.
Karandashov, S.A.
Kutt, R.N.
Matveev, B.A.
Ruvimov, S.S.
Sorokin, L.M.
Stus, N.M.
Talalakin, G.N.
5 more
Publication title:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
216
Pub. Year:
1991
Page(from):
203
Page(to):
206
Pages:
4
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
Language:
English
Call no.:
M23500/216
Type:
Conference Proceedings

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