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InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

Author(s):
Dobbelaere, W.
De Boeck, J.
De Raedt, W.
Vanhellemont, J.
Zou, G.
Van Hove, M.
Brijs, B.
Mertens, R.
Borghs, G.
4 more
Publication title:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
216
Pub. Year:
1991
Page(from):
181
Page(to):
186
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
Language:
English
Call no.:
M23500/216
Type:
Conference Proceedings

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